Space Exploration Activities Are Expected to Augment the Gan Epitaxial Wafers Market Growth

Gallium nitride (GaN) is used in the production of light-emitting diodes, radio-frequency (RF) components, and semiconductor power devices. GaN-powered devices have proven to be more efficient than silicon-powered devices in RF, power conversion, and analog applications. Moreover, the production cost of these devices is lower than that of silicon, as GaN devices are manufactured using standard silicon manufacturing processes currently used to produce conventional silicon semiconductors. GaN devices are much smaller and can be produced per wafer. GaN-powered devices are faster that yield less capacitance and less switching losses results in fewer losses when charging/discharging devices. Furthermore, these devices need less space on the printed circuit board.

The above-mentioned benefits of GaN over silicon transistors are expected to propel the growth of the GaN epitaxial wafers market. Moreover, technological advances related to GaN devices are increasing the computational power of all systems, driving market growth. For example, in 2017, Yuji Zhao received a three-year grant of US$ 750,000 from NASA’s Hot Operating Temperature Technology program for GaN processor (Gallium nitride is a next-generation technology of space exploration) for applications in space. Furthermore, in 2018, Corsair introduced Corsair AX1600i with voltage regulation, noise levels, ripple suppression, off-shelf efficiency, and a highly compact power supply unit.

However, the high cost of materials and manufacturing procedures are expected to hamper the GaN epitaxial wafers market growth. The high proliferation of electric vehicles, increasing adoption of autonomous vehicles, and increasing adoption of electrical/electronic components in internal combustion engines is expected to increase the demand for efficient communication systems, which, in turn, is expected to drive the GaN epitaxial wafers market growth. For instance, the government of India aims to make India a 100% electric-vehicle nation by 2030.

Furthermore, the application of GaN semiconductor is expected to become a mainstream component, although it will require considerable time due to the cost factor and thus, is one of the major growth challenges. In terms of geography, the GaN epitaxial wafers market is divided into six regions, such as North America, Europe, Asia Pacific, South America, the Middle East, and Africa. Asia Pacific is the largest market for major end-use industries (such as consumer electronics, automotive, etc.), contributing to the largest consumer base for GaN power devices. For instance, in 2019, the Indian Institute of Science developed India’s first-ever e-mode GaN power transistor, whose performance is comparable to some of the best reports to date.